Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process
نویسندگان
چکیده
منابع مشابه
Graphene-BN Heterostructures: An In-Plane Transistor
Graphene-Boron Nitride (G-BN) heterostructures can lead to the realization of nanoscale electronics that will be smaller than the dimensional limit—14 nanometers—of silicon transistors and provide higher mobilities. However, the grapheneboron nitride heterostructure although self-insulating, cannot function as a transistor alone due to not having a second conducting pathway. Thus, the utilizati...
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Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked gr...
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ژورنال
عنوان ژورنال: Journal of Physics: Materials
سال: 2018
ISSN: 2515-7639
DOI: 10.1088/2515-7639/aac66e